Dielectric profile controlled microwave sterilization system

ABSTRACT

A dielectric profiler establishes a dielectric profile of microwave characteristics for identifying, sterilizing or inactivating a target material prior to performing a microwave irradiation event to sterilize or inactivate the target material.

This United States Non-provisional patent application claims the benefitof U.S. Provisional Patent Application No. 60/682,497, filed May 18,2005, hereby incorporated by reference herein.

I. BACKGROUND

Microwave radiation has been used to heat a wide variety of materials tothe point where temperatures are sufficient to create sterilizationeffects. Many materials, especially those which have not absorbedmoisture, may require prolonged exposure at high power levels to ensurecomplete sterilization.

However, the determination of when a material is rendered inactive ordestroyed by irradiation with microwaves still relies largely uponobservable changes of the irradiated material. This reliance uponobservation of the irradiated material may be impractical when theirradiated material is divided among a large number of discretecontainers or when the irradiated material is a biological pathogen ortoxic chemical, or may be unlawful for example in the case of openingthe United States mail to obtain samples of the irradiated material.

Moreover, conventional irradiation devices and irradiation methodssuffer from a lack of precision. Conventional material irradiationdevices and methods rely upon a fixed frequency microwave source whichprovides a high intensity, non-specific radiation field that may be manytimes stronger than is required to sterilize or heat a particularmaterial because determination as to when a material has been renderedinactive remains largely a matter of guesswork in many cases.

As to these problems and other problems related with conventionalmicrowave irradiation of materials for the purpose of sterilization orheating of a material, rendering the material inactive or destroying thematerial, the instant invention addresses each in practical fashion.

II. SUMMARY OF THE INVENTION

Accordingly, a broad object of the invention can be to provide adielectric profiler which analyzes the dialect profile of a materialover a wide frequency range which allows adjustment of the microwavefrequency prior to material irradiation to achieve sterilization orheating.

Another broad object of the invention can be to provide a computer whichoperates a dielectric profiler application program which compensates fora numerous and wide variety of material variables including withoutlimitation moisture, volume, temperature, density, contaminants, or thelike, by use of calibration profiles retrievable from a computer memoryelement.

Another broad object of the invention can be to operate a dielectricprofiler at power levels which avoid or reduce alteration of the targetmaterial (the “profiling event”) prior to irradiation for the purpose ofsterilization or heating. Many substances display an altered irradiationabsorption profile once they have been exposed to any intense radiofrequency field. In certain instances, the amount of microwave energy amaterial can absorb can be altered by increasing wavelength frequency ofmicrowave irradiation. As such, application of a strong irradiationfield at one frequency can alter material characteristics and hindermeasurement of the dielectric characteristics of the material at adifferent frequency.

Another broad object of the invention can be to provide a method ofmicrowave irradiation of a material which includes at least a first stepof assessing the dielectric profile of a material to determine afrequency (or frequencies) at which to irradiate the material, and caninclude additional steps of assessing rate of change in temperature ofthe material at such established frequency (or frequencies) to establisha duration of an irradiation period at such frequency (or frequencies),irradiation of the material at such frequency (or frequencies) for suchirradiation period (the “irradiation event”), comparison of thedielectric profile of the material before the irradiation event and thedielectric profile after the irradiation event, assessment based uponsuch comparison as to the degree to which the material has been alteredby the irradiation event, and assessment based upon such comparison asto whether any undesired products have been generated by the irradiationevent.

Another broad object of the invention can be to provide automaticdetection and selective destruction or inactivation of a first materialon the surface of a second material such as a manufacturing material; orof a first material contained inside a space defined by theconfiguration of a second material such as parcels, envelopes, boxes,containers, or the like; or of a first material such as mold or otherpathogen located in the wall space of a building. However, thesespecific examples are not intended to be limiting with respect to thenumerous and wide variety of applications encompassed by the invention.

Another broad object of the invention can be to provide for detectionand identification of concealed materials such as bacteria, viruses,pathogens, cells, cell components, chemicals, compositions, or mixturesor combinations thereof, which as to certain embodiments of theinvention, can further comprise the generation of 3D images of aconcealed materials.

Naturally, further objects of the invention can be understood from thedescription and drawings.

III. A BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an embodiment of the invention which operates to provideboth a profiling event and a microwave irradiation event of a targetmaterial.

FIG. 2 provides non-limiting examples of configurations of microwavecells and arrays of microwave cells which can be used in embodiments ofthe invention to provide a profiling event or a microwave irradiationevent of a target material.

FIG. 3 shows a particular embodiment of the invention used to provide aprofiling event or an irradiation event, or both, of a target materialsuch as a letter or package.

IV. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A device and method of using microwaves to irradiate target material(s)which allows pre-selection of microwave characteristics to limitduration of the irradiation event, assess alteration of the material dueto the irradiation event, and to detect undesired products generated bythe irradiation event.

The term “target material” is intended to broadly encompass any mannerof composition regardless of form or configuration which absorbsmicrowave radiation and with limitation animal tissue, plant tissue,biological particles such as bacteria, viruses, cells, cancer cells,tumors, inorganic materials which in certain cases may be rare, exotic,or precious materials such as gold, diamonds, or like or because thematerial is obtainable only in small quantity.

The term “microwave characteristic” is intended to broadly encompass anymicrowave frequency or combination of microwave frequencies, the poweror power profile of such microwave frequency or combination offrequencies, the period or the periods in which microwave irradiationoccurs whether continuous or discontinuous, or the like.

The term “sterilization” is intended to broadly encompass any alterationof the target material including without limitation killing orinactivating bacteria, viruses, pathogens molds, cells or componentsthereof, or inactivating or altering chemicals, toxins or the like; orincreasing the temperature of a target material to a desiredtemperature.

Now referring primarily to FIG. 1, embodiments of the invention cangenerate a profile of the microwave characteristics of a targetmaterial(s) of interest. The profile of the microwave characteristics ofthe target material can be generated by the invention by use of adielectric profiler which measures the amount of energy absorbed by thetarget material as a microwave frequency is swept across a microwavespectrum (the “profiling event”). Variations in the harmonics and theratio between the fundamental wave frequency and harmonics are detectedand assessed to generate a target material irradiation profile. Thematerial irradiation profile can be used to control microwavecharacteristics applied to the target material to achieve a level ofmicrowave absorption over a duration of time (the “irradiation event”).A first material irradiation profile of a material can be stored in amemory element and compared against a second material irradiationprofile of the material to assess alteration of the material due to theirradiation event.

A computer (22) and associated software provides logistical and safetycontrol of the various components or element of the invention. Aninterface (23) provides manual control(s), input control(s) and outputcontrol(s). A target material conveyer (1) can transport the targetmaterial (2) along the travel path of the invention. The target material(2) may be moved back and forth along the travel path by reversing thetarget material conveyer (1). The target material (2) can be locatedbetween at least one matrix array panel (26, 29) for the profiling eventand a second matrix array panel (19, 20) for the irradiation event. Thenumber of matrix panels utilized for the profiling event or theirradiation event, or both, may be tailored to suit the particularapplication.

A microwave generator (17)(variable frequency or otherwise) and a seriesof multiplexors (12, 14, 18, 21, 25, 30) can be connected tocorresponding oscillators (15, 31) and detectors (11, 24) to provide afocused matrix array panel. Each element of the matrix array panel pair(26, 29 or 19, 20) can be connected to the corresponding multiplexor(12, 14, 18, 21, 25, and 30) by a network of microwave transmissionlines or circuits (13). Infrared sensors, humidity sensors, or othersensors (21) can be coupled to the matrix array panel (20) to providefeedback on temperature rise. A safety module (16) provides protectionagainst overloads.

The dielectric profiler can comprise a radiofrequency source (15 or 31)and a corresponding opposed radiofrequency detector (11 or 24) which canbe calibrated over a wide frequency range. The calibration procedureencompasses each cell of a transmission element (19 or 29) and eachcorresponding cell of a receiver element (20 or 26) of the each matrixarray panel used to during the profiling event associated with thetarget material (2). The component parts above-described, define the“radiofrequency network” of the invention.

Calibration of the radiofrequency network comprises the steps of usingthe computer (22) to locate the transmission element(s) (19 or 29) andthe corresponding receiver elements (20 or 26) a distance apartaccording to an operators input (if the system is set for manual mode)or from sensors (32) if the system is in automatic mode. The targetmaterial (2) used for calibration can be located between thetransmission element-receiver element pairs. The transmissionelement-receiver element pairs as shown by FIGS. 1, 2, 3 can bevertically oriented but as to certain embodiments of the invention thetransmission element-receiver element pairs can be oriented horizontallyor at other angles depending on the application. It is also possible fortwo transmission element-receiver element pairs to be mounted to form asquare, or other geometric configuration, for use in processing all thesurfaces of a target material (2) in one operation.

The computer (22) can adjust the oscillator of each radiofrequencysource (“RF source”) (15, 31) to a first frequency “x” and connects theoutput of the RF source (15, 31) through the selector (18, 30) to thematrix array panel (19, 29) to transmit cell “A”. The output of thereceiver cell “Ar” opposing the transmit cell “A” can be connectedthrough the selector (12, 25) to the radiofrequency detector “RFdetector” (11, 24). The analog output of the receiving cell “Ar” isproportional to the intensity of the radiofrequency field received fromthe transmit cell “A”. The analog signal of receiver cell “Ar” can beconverted into a digital signal retrievably storable in a memory elementof the computer (22).

The computer as to transmission cell “A” and receiver cell “Ar” canadjust the oscillator of each RF source (15, 31) to a second frequency“y” and the sequence of steps above-described can be repeated. Once aplurality of frequencies in the frequency range have been applied to thetarget material calibrated for the transmission cell “A” and receivercell “Ar”, as above-described, the computer calibrates a secondtransmission cell-receiver cell pair by the above-described steps. Thesteps in the sequence are repeated until all the transmissioncell-receiver cell pairs in the matrix array panel (19, 20 or 29, 26)are calibrated.

Each transmission cell or receiver cell within a matrix array panel pairmay itself be comprised of a number of “elements” to allow for a widevariety of target material configurations whether size or shapevariations. Each element can undergo a similar sequence of calibrationcycles.

Upon completion of the calibration procedure the computer (22) now has a“map” of the field intensity related the plurality of transmissioncell-receiver cell pairs or plurality of element pairs within the matrixarray panel or portion thereof utilized in the calibration event. Theresult of the calibration event is that substantially all of the radiofrequency variables are “calibrated out” of the response of theradiofrequency network over the calibration frequency range. When atarget material (2) is located between the cell pairs or element pairsof a calibrated matrix array panel pair (29, 26 or 19, 20), the signalfrom the corresponding detector (11 or 24) reflects the alteration ofthe microwave energy absorbed due to the dielectric characteristics ofthe target material (2) to which the dielectric profiling event wasapplied.

As the target material (2) is subjected to a dielectric profiling event,changes within the target material (2) can affect the relative amplitudeof the harmonics of the fundamental frequency. Some harmonics mayincrease while others may decrease. These alterations in harmonics ofthe fundamental frequency form part of the dielectric profiling datagathered along with other dielectric profiling data such as exposuretime, temperature, field intensity, or the like. The dielectricprofiling data can be stored in the memory element of the computer (22)and can be used to generate a dielectric profile of the target material(2) which can be utilized to identify the target material (2) bycomparison to dielectric profiles of target materials used as standardsand can be further utilized as the basis for prescribing the microwavecharacteristics of the microwave irradiation event.

The dielectric profiling event for a target material (2) can be carriedby repeating the steps of the calibration event above-described.Dielectric profiling event values can be mathematically manipulated tocorrect for all of the variables of the original calibration event. Theresults can be stored as the “dielectric profile” of the target material(2). The dielectric profile is a measure of the target material'sabsorption of the different frequencies within the microwave frequencyspectrum applied during the dielectric profiling event. The frequency orfrequencies that the target material absorbs most represents thefrequency or frequencies to which the target material is most sensitive.

Once the dielectric profile for the target material (2) has been storedin the memory element of the computer (22) a map can be generatedshowing which frequency or frequencies are associated with energyabsorption for that particular target material. As such, a plurality ofdielectric profiles can be used as standard dielectric profiles toidentify the corresponding target material in applications such asscreening mail or baggage. The dielectric profile can also be used inconjunction with an application program to control the frequency andoutput power of a microwave generator (17) for subsequent microwaveirradiation events.

If the target material (2) undergoes the microwave irradiation eventutilizing the frequency and output power established by use of thedielectric profile in conjunction with the application program,alteration of the target material (2) due to the microwave irradiationevent can be assessed by comparison of a first dielectric profile of thetarget material generated before the microwave irradiation event andsecond dielectric profile of the target material generated after themicrowave irradiation event.

The computer (22) can be programmed to automatically select theappropriate field strength and duration of exposure(s) for any targetmaterial (2) identified by the dielectric profiler. Software may be usedto manipulate the stored values to suit the particular application, forexample it may be desirable to extend exposure time if a temperature orhumidity change in the immediate environment surrounding the sample wereto occur. In the embodiment of the invention shown by FIG. 1 there aretwo dielectric profilers; the first comprises elements 11, 12, 13, 33,32, 14 and 15. The second comprises elements 24, 25, 26, 29, 30 and 31.The duplication of the dielectric profiler and the profiling event andthe associated circuitry and computer application program can increasethroughput and accuracy in an environment in which a large numberdiscrete targets require assessment. It can avoid the need to reversethe target material conveyor (1) to re-appraise the target material (2)after the microwave irradiation event. The basic configuration of theembodiment of the invention shown by FIG. 1 may be repeated if increasedspeed, accuracy or throughput is required. The system could be acontinuum of dielectric profiler 1, generator 1, dielectric profiler 2,generator 2, dielectric profiler 3 and so forth. The invention isnormally operated under computer (22) control but a manual interface(23) is provided to allow local control of the invention if required.

Now referring primarily to FIGS. 2 and 3, a matrix of microwave antennacells (7, 9) can be formed into a microwave transmission array (3) largeenough to provide >100% coverage of the target material (2) to beexamined or evaluated. Each transmission cell can be connected in turnto the microwave generator (17) through a multiplexer (14) (as shown byFIG. 1). The dwell time (the length of time each transmission cell staysconnected to the microwave generator) is determined by the computer (22)which also controls the speed at which the target material (2) passes infront of the microwave transmission array (3).

Now referring specifically to FIG. 2, an embodiment of the microwavetransmission array (3) can comprise a plurality of microwave antennacells (7, 8 or 9) formed into a matrix (3, 4, 5, 6) which may beconfigured to optimize performance in the frequency bands of interest oraccommodate the size and shape of the target material (2) to provide theoptimum depth of field or provide a uniform intensity field, or both,for use in profiling events to detect and identify target materials.These attributes conserve power by focusing the energy; applying theoptimum energy field strength over the desired area and minimizingcollateral damage to surrounding objects or substances. There are manyvariations and permutations available in existing microwave antennatechnology that can provide the desired matrix cell, aperture and gain.By combining numerous individual transmission elements (such as 10) witha parabolic reflector (7), or an alternative reflector (9) of less focalcapability but perhaps wider bandwidth, an array with the desired beamwidth, bandwidth and gain may be produced.

The microwave energy (to or from) the individual cells within theoverall matrix may be electronically manipulated to provide a series ofmacro-cells which allows a lower or higher resolution to be achieved.For example the matrix shown in FIG. 3 can be comprised of 36 cells in a6×6 format. Each cell may be used individually or the energy from 2×2 or3×3 or 4×4 or 2×4, or the like, can be combined to produce a desireddistribution of microwave energy. Any permutation is possible within theconstraints of normal microwave engineering problems such as insertionloss, bandwidth, reduced signal to noise ratio and the like. Theindividual transmission elements (10) within a transmission cell canalso be configured as antennas with specified beam width anddirectivity. Individual cells (7, 9) may be “nested’ to form a compoundstructure designed to achieve a specified bandwidth or other desirablecharacteristic. High and low frequency cells may be interleaved toachieve a specified bandwidth or other desirable characteristic. Amatrix may be composed of as many cells as is desired, a practical limitwill be set automatically by physical constraints or microwaveengineering limitations.

For analysis of a small target material (2) or for analyzing smallamounts of a target material (2), an individual “duplex cell” (7 and 8)can be used. Typically, one half of the cell could have a concavesurface (7), the other a convex surface (8). Regardless of the surfaceprofile actually used, both parts of the cell must mate togetheraccurately. Membranes or coatings of inert material can be used toelectrically isolate the surfaces of the transmission cell from thetarget material (2). Conductive bands, strips or arrays of elements(such as, but not limited to, dipoles) of conductive material, may beconfigured into the cell structure to provide the desired energydistribution profile. The cells can be moved by actuating mechanisms,such as but not limited to motors or piezoelectric crystals. Cells maybe brought into close proximity under computer or manual control. Cellsmay be mounted in a sealed chamber for security, safety or otherconsiderations such as cryogenic temperature analysis etc. Cells,especially those used for dangerous substance analysis or where crosscontamination is a concern could be designed and manufactured to bedisposable. The matrix assemblies can be moved by actuating mechanisms,such as but not limited to motors, air pistons, hydraulic rams etc.Matched pairs of matrix assemblies may be brought into close proximityunder computer or manual control. Matched pairs of matrix assemblies maybe mounted in a sealed chamber for security, safety or otherconsiderations such as cryogenic temperature analysis, or the like. Aversion of the matrix assembly can be designed and manufactured to bedisposable. Cells or matrix assemblies may be fitted with an integratedtracking device for security purposes. Cells or matrix assemblies may befitted with an auto destruct mechanism to protect against the contentsbeing exposed. Cells or matrix assemblies may be fitted with a devicewhich provides a magnetic field or other form of desirable feature.Duplex cell pairs or matrix assemblies, which are pre-profiled may bemade available for use by organizations requiring the ability to inserttheir substance, seal the matrix or duplex cell and send it to a thirdparty (such as a government agency for example) for evaluation ortreatment. The dielectric profiler function may be constructed to makeuse of the high power array elements in an interleaved configurationwith the dielectric profiler. It can allow for repeated profiling eventsto be followed by high energy microwave irradiation events for extremelyaccurate control. It can have the added benefit of avoiding the need tomove the target material (2) during the profiling event or the microwaveirradiation event, or both. The position of the matrix panels can beadjustable and they may be configured automatically, if desired, bycomputer control. As the relative position of the panel is altered sothe computer reconfigures and compensates for any change in focal ortarget illumination requirements. The invention can also be scaled toaccommodate very large structures such as shipping containers, trucks,or the like, which may be moved automatically through the invention, asdescribed for smaller targets such as letters, boxes, or the like. Insuch cases, array scanning techniques, doppler shift measurement andpulsed operation would provide benefits for large scale structureanalysis. By configuring matrix panels in a cubic configuration, a 3Dimage of a target(s) internal structure may be constructed from a seriesof measurements using a uniform field absorption profile. For large areatargets, some form of measurement correction, such as using dopplershift, or the like, could be included. For biological substances orobjects, pulsed operation and the ability to accurately focus the energyensures maximum control and minimal damage to surrounding substances.

As can be easily understood from the foregoing, the basic concepts ofthe present invention may be embodied in a variety of ways. Theinvention involves numerous and varied embodiments of a microwavesterilization system and methods of making and using such microwavesterilization system.

As such, the particular embodiments or elements of the inventiondisclosed by the description or shown in the figures accompanying thisapplication are not intended to be limiting, but rather exemplary of thenumerous and varied embodiments generically encompassed by the inventionor equivalents encompassed with respect to any particular elementthereof. In addition, the specific description of a single embodiment orelement of the invention may not explicitly describe all embodiments orelements possible; many alternatives are implicitly disclosed by thedescription and figures.

It should be understood that each element of an apparatus or each stepof a method may be described by an apparatus term or method term. Suchterms can be substituted where desired to make explicit the implicitlybroad coverage to which this invention is entitled. As but one example,it should be understood that all steps of a method may be disclosed asan action, a means for taking that action, or as an element which causesthat action. Similarly, each element of an apparatus may be disclosed asthe physical element or the action which that physical elementfacilitates. As but one example, the disclosure of a “profiler” shouldbe understood to encompass disclosure of the act of “profiling”—whetherexplicitly discussed or not—and, conversely, were there effectivelydisclosure of the act of “profiling”, such a disclosure should beunderstood to encompass disclosure of a “profiler” and even a “means forprofiling.” Such alternative terms for each element or step are to beunderstood to be explicitly included in the description.

In addition, as to each term used it should be understood that unlessits utilization in this application is inconsistent with suchinterpretation, common dictionary definitions should be understood toincluded in the description for each term as contained in the RandomHouse Webster's Unabridged Dictionary, second edition, each definitionhereby incorporated by reference.

Thus, the applicant(s) should be understood to claim at least: i) eachof the microwave profiling or sterilization devices herein disclosed anddescribed, ii) the related methods disclosed and described, iii)similar, equivalent, and even implicit variations of each of thesedevices and methods, iv) those alternative embodiments which accomplisheach of the functions shown, disclosed, or described, v) thosealternative designs and methods which accomplish each of the functionsshown as are implicit to accomplish that which is disclosed anddescribed, vi) each feature, component, and step shown as separate andindependent inventions, vii) the applications enhanced by the varioussystems or components disclosed, viii) the resulting products producedby such systems or components, ix) methods and apparatuses substantiallyas described hereinbefore and with reference to any of the accompanyingexamples, x) the various combinations and permutations of each of theprevious elements disclosed.

The claims set forth in this specification are hereby incorporated byreference as part of this description of the invention, and theapplicant expressly reserves the right to use all of or a portion ofsuch incorporated content of such claims as additional description tosupport any of or all of the claims or any element or component thereof,and the applicant further expressly reserves the right to move anyportion of or all of the incorporated content of such claims or anyelement or component thereof from the description into the claims orvice-versa as necessary to define the matter for which protection issought by this application or by any subsequent continuation, division,or continuation-in-part application thereof, or to obtain any benefitof, reduction in fees pursuant to, or to comply with the patent laws,rules, or regulations of any country or treaty, and such contentincorporated by reference shall survive during the entire pendency ofthis application including any subsequent continuation, division, orcontinuation-in-part application thereof or any reissue or extensionthereon.

The claims set forth below are intended describe the metes and bounds ofa limited number of the preferred embodiments of the invention and arenot to be construed as the broadest embodiment of the invention or acomplete listing of embodiments of the invention that may be claimed.The applicant does not waive any right to develop further claims basedupon the description set forth above as a part of any continuation,division, or continuation-in-part, or similar application.

1. A method of irradiating a target material, comprising the steps of:a. performing a first profiling event of said target material; b.generating a first dielectric profile of said target material based onsaid first profiling event; c. generating a target material irradiationprofile of said target material based on said first dielectric profile;and d. irradiating said target material with an amount of microwaveradiation based on said target material irradiation profile.
 2. A methodof irradiating a target material as described in claim 1, furthercomprising the step of performing a second profiling event of saidtarget material subsequent to irradiating said target material.
 3. Amethod of irradiating a target material as described in claim 2, furthercomprising the step of generating a second dielectric profile of saidtarget material based on said second profiling event.
 4. A method ofirradiating a target material as described in claim 3, furthercomprising the step of comparing said second dielectric profile saidtarget material to said first dielectric profile of said target.
 5. Amethod of irradiating a target material as described in claim 4, furthercomprising the step of assessing alteration of said target materialbased on comparison of said second target material irradiation profileto said first target material irradiation profile.
 6. A method ofirradiating a target material as described in claim 5, furthercomprising the step of establishing sufficiency of alteration of saidtarget material based on comparison of said second target materialirradiation profile to said first target material irradiation profile.7. A method of irradiating a target material as described in claim 5,further comprising the steps of; a. establishing insufficiency ofalternation of said target material based on comparison of said secondtarget material irradiation profile to said first target materialirradiation profile; and b. repeating said step of irradiating saidtarget material with an amount of microwave radiation based on saidtarget material irradiation profile to achieve said step of establishingsufficiency of alteration of said target material based on comparison ofsaid second target material irradiation profile to said first targetmaterial irradiation profile.
 8. A method of irradiating a targetmaterial as described in claim 1, wherein said step of performing saidfirst profiling event comprises the steps of: a. generating a pluralityof frequencies of microwave radiation which correspond to a sweptmicrowave frequency spectrum; b. exposing said target material to saidplurality of frequencies of microwave radiation which correspond to saidswept microwave frequency spectrum; and c. detecting adsorption by saidtarget material of each one of said plurality of frequencies ofmicrowave radiation which correspond to said swept microwave frequencyspectrum
 9. A method of irradiating a target material as described inclaim 1, wherein said step of generating a first dielectric profile ofsaid target material comprises the step of generating a measure ofadsorption by said target material of each one of said plurality offrequencies of microwave radiation which correspond to said sweptmicrowave frequency spectrum.
 10. A method of irradiating a targetmaterial as described in claim 1, wherein said step of generating atarget material irradiation profile of said target material based onsaid first profiling event comprises the step of identifying each one ofsaid plurality of frequencies of microwave radiation which correspond tosaid swept microwave frequency spectrum absorbed by said targetmaterial.
 11. A method of irradiating a target material as described inclaim 10, wherein said step of generating a target material irradiationprofile of said target material based on said first profiling eventfurther comprises the step of establishing a power value of each one ofsaid plurality of frequencies of microwave radiation which correspond tosaid swept microwave frequency spectrum identified as absorbed by saidtarget material.
 12. A method of irradiating a target material asdescribed in claim 10, wherein said step of generating a target materialirradiation profile of said target material based on said firstprofiling event further comprises establishing a duration value of eachone of said plurality of frequencies of microwave radiation whichcorrespond to said swept microwave frequency spectrum identified asabsorbed by said target material.
 13. A method of irradiating a targetmaterial as described in claim 1, wherein said step of irradiating saidtarget material with an amount of microwave radiation based on saidtarget material irradiation profile further comprises the step of: a.adjusting each one of said plurality of frequencies of microwaveradiation which correspond to said swept microwave frequency spectrumidentified as absorbed by said target material to; b. adjusting aduration of each one of said plurality of frequencies of microwaveradiation which correspond to said swept microwave frequency spectrumidentified as absorbed by said target material; c. irradiating saidtarget material with at least one of said plurality of frequencies ofmicrowave radiation which correspond to said swept microwave frequencyspectrum identified as absorbed by said target material at said powerand for said duration of time.
 14. A method of irradiating a targetmaterial as described in claim 2, wherein said step of performing saidsecond profiling event comprises the steps of: a. generating saidplurality of frequencies of microwave radiation which correspond to aswept microwave frequency spectrum; b. exposing said target material tosaid plurality of frequencies of microwave radiation which correspond tosaid swept microwave frequency spectrum; and c. detecting adsorption bysaid target material of each one of said plurality of frequencies ofmicrowave radiation which correspond to said swept microwave frequencyspectrum
 15. A method of irradiating a target material as described inclaim 3, wherein said step of generating a second dielectric profile ofsaid target material comprises the step of generating said measure ofadsorption by said target material of each one of said plurality offrequencies which correspond to said swept microwave frequency spectrum.16. A method of identifying a target material, comprising the steps of:a. performing a profiling event on each one of a plurality of standardmaterials; b. generating a standard material dielectric profilecorresponding to each one of said plurality of standard materials; c.performing said profiling event on a target material; d. generating atarget material dielectric profile corresponding to said targetmaterial; e. comparing said target material dielectric profile to saidstandard material dielectric profile generated for each one of saidplurality of standard materials; and f. matching said target materialdielectric profile to said standard material dielectric profile of oneof said plurality of standard materials to identify said targetmaterial.
 17. A method of identifying a target material as described byclaim 16, wherein said step of performing said profiling event comprisesthe steps of: a. generating a plurality of frequencies of microwaveradiation which correspond to a swept microwave frequency spectrum; b.exposing said target material to said plurality of frequencies ofmicrowave radiation which correspond to said swept microwave frequencyspectrum; and c. detecting adsorption by said target material of eachone of said plurality of frequencies of microwave radiation whichcorrespond to said swept microwave frequency spectrum
 18. A method ofidentifying a target material as described in claim 16, wherein saidsteps of generating a standard material dielectric profile correspondingto each one of said plurality of standard materials and of generating atarget material dielectric profile corresponding to said target materialcomprise generating a measure of adsorption for each of said standardmaterial and said target material of each one of a plurality offrequencies of microwave radiation which correspond to a swept microwavefrequency spectrum.
 19. A target material irradiator, comprising: a. atleast one microwave source which emits a plurality of frequencies ofmicrowave radiation which correspond to a swept microwave frequencyspectrum at a first power level in a first time duration; b. a targetmaterial exposed to said plurality of frequencies of microwave radiationwhich correspond to said swept microwave frequency spectrum at saidfirst power level in said first time duration; c. at least one microwavedetector which generates a signal which varies based on adsorption bysaid target material of each one of said plurality of frequencies ofmicrowave radiation which correspond to said swept microwave frequencyspectrum at said first power level in said first time duration; d. adielectric profiler which measures adsorption by said target material ofeach one of said plurality of frequencies which correspond to said sweptmicrowave frequency spectrum at said first power level in said firsttime duration; e. a target material irradiation profiler whichidentifies each one of said plurality of frequencies of microwaveradiation which correspond to said swept microwave frequency spectrumabsorbed by said target material at said first power level in said firsttime duration, and wherein said target irradiation profiler furtherestablishes a power value of each one of said plurality of frequenciesof microwave radiation which correspond to said swept microwavefrequency spectrum identified as absorbed by said target material atsaid first power level in said first time duration, and wherein saidtarget irradiation profiler further establishes a time duration value ofeach one of said plurality of frequencies of microwave radiation whichcorrespond to said swept microwave frequency spectrum identified asabsorbed by said target material a said first power in said first timeduration; and f. a microwave irradiator which irradiates said targetmaterial with at least one of said plurality of frequencies of microwaveradiation which correspond to said swept microwave frequency spectrumidentified as absorbed by said target material at said first power levelin said first duration of time, wherein said microwave irradiator emitssaid at least one of said plurality of frequencies of microwaveradiation at a second power level which corresponds to said establishedpower value, and wherein said microwave irradiator emits said at leastone of said plurality of frequencies of microwave radiation in a secondtime duration which corresponds to said established time duration value.20. A target material irradiator as described in claim 19, where said atleast one microwave source couples to a first one half of a duplex cell,and wherein said at least one microwave detector couples to a second onehalf of said duplex cell.